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BUK7575-100A датащи(PDF) 3 Page - NXP Semiconductors

номер детали BUK7575-100A
подробное описание детали  N-channel TrenchMOS standard level FET
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7575-100A датащи(HTML) 3 Page - NXP Semiconductors

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BUK7575-100A_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 July 2009
3 of 13
NXP Semiconductors
BUK7575-100A
N-channel TrenchMOS standard level FET
4.
Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage
RGS =20kΩ
-100
V
VGS
gate-source voltage
-20
20
V
ID
drain current
Tmb =25°C; VGS =10V; see Figure 1 and 3
-23
A
Tmb =100 °C; VGS = 10 V; see Figure 1
-16.2
A
IDM
peak drain current
Tmb =25°C; tp ≤ 10 µs; pulsed; see Figure 3
-92
A
Ptot
total power dissipation
Tmb =25°C; see Figure 2
-99
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Source-drain diode
IS
source current
Tmb =25°C
-
23
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb =25°C
-
92
A
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
ID =14A; Vsup ≤ 100 V; RGS =50 Ω; VGS =10V;
Tj(init) = 25 °C; unclamped
-100
mJ
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
Tmb (°C)
0
200
150
50
100
03aa24
40
80
120
Ider
(%)
0
Tmb (°C)
0
200
150
50
100
03na19
40
80
120
Pder
(%)
0


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