BUK7528-100A

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 2 — 26 April 2011

7 of 13

NXP Semiconductors

BUK7528-100A

N-channel TrenchMOS standard level FET

Fig 7.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 8.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 11. Normalized drain-source on-state resistance

factor as a function of junction temperature

Fig 12. Gate-source threshold voltage as a function of

junction temperature

160

80

120

40

200

(A)

0

010

8

46

2

003aaf157

13.5

10.0

9.0

8.0

7.5

7.0

5.5

6.5

6.0

5.0

4.5

003aaf158

5

125

85

45

35

45

25

55

65

(m

Ω)

15

6.0

6.5

7.0

7.5

8.0

5.5

15

27

23

19

31

(m

Ω)

515

13

911

7

003aaf159

40

60

20

80

100

(A)

0

08

6

4

2

003aaf160

1.0

0.5

1.5

2.0

a

0

003aaf162

−100

200

0

100

0

4

3

2

1

5

(V)

003aaf163

−100

200

100

0

maximum

typical

minimum