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BUK7208-40B датащи(PDF) 6 Page - NXP Semiconductors

номер детали BUK7208-40B
подробное описание детали  N-channel TrenchMOS standard level FET
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7208-40B датащи(HTML) 6 Page - NXP Semiconductors

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BUK7208-40B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 7 June 2010
6 of 14
NXP Semiconductors
BUK7208-40B
N-channel TrenchMOS standard level FET
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V; Tj = 25 °C
40
--V
ID = 0.25 mA; VGS =0V; Tj = -55 °C
36
-
-
V
VGS(th)
gate-source threshold
voltage
ID =1mA; VDS =VGS; Tj =25 °C;
see Figure 10
234V
ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.4
V
ID =1mA; VDS =VGS; Tj =185 °C;
see Figure 10
0.9
--V
IDSS
drain leakage current
VDS =40V; VGS =0V; Tj = 185 °C
-
-
500
µA
VDS =40V; VGS =0V; Tj = 25 °C
-
0.02
1
µA
IGSS
gate leakage current
VDS =0V; VGS =20 V; Tj = 25 °C
-
2
100
nA
VDS =0V; VGS =-20 V; Tj = 25 °C
-
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A; Tj =185 °C;
see Figure 11; see Figure 12
-
-
15.6
m
VGS =10V; ID =25A; Tj =25°C;
see Figure 11; see Figure 12
-6.6
8
m
Dynamic characteristics
QG(tot)
total gate charge
ID =25A; VDS =32V; VGS =10V;
Tj = 25 °C; see Figure 13
-35
-
nC
QGS
gate-source charge
-
9.8
-
nC
QGD
gate-drain charge
-
11.5
-
nC
Ciss
input capacitance
VGS =0V; VDS = 25V; f=1MHz;
Tj = 25 °C; see Figure 14
-
1870
2493
pF
Coss
output capacitance
-
482
578
pF
Crss
reverse transfer
capacitance
-
201
275
pF
td(on)
turn-on delay time
VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =10 Ω; Tj =25°C
-16
-
ns
tr
rise time
-
104
-
ns
td(off)
turn-off delay time
-
47
-
ns
tf
fall time
-
51
-
ns
LD
internal drain inductance
measured from drain to centre of
die ; Tj =25°C
-2.5
-nH
LS
internal source inductance
measured form source lead to
source bond pad ; Tj =25°C
-7.5
-nH
Source-drain diode
VSD
source-drain voltage
IS =17A; VGS =0V; Tj =25°C;
see Figure 15
-
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = -100 A/µs;
VGS =-10 V; VDS =30V; Tj =25°C
-50
-
ns
Qr
recovered charge
-
36
-
nC


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