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BUK7107-55AIE датащи(PDF) 6 Page - NXP Semiconductors |
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BUK7107-55AIE датащи(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK7107-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 February 2009 6 of 14 NXP Semiconductors BUK7107-55AIE N-channel TrenchPLUS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj =25°C 55 - - V ID =0.25mA; VGS =0V; Tj =-55 °C 50 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS = VGS; Tj =25°C; see Figure 9 234 V ID =1mA; VDS = VGS; Tj = 175 °C; see Figure 9 1- - V ID =1mA; VDS = VGS; Tj =-55 °C; see Figure 9 --4.4 V IDSS drain leakage current VDS =55V; VGS =0V; Tj =25°C - 0.1 10 µA VDS =55V; VGS =0V; Tj = 175 °C - - 250 µA V(BR)GSS gate-source breakdown voltage IG =1mA; VDS =0V; Tj <175 °C; Tj >-55 °C 20 22 - V IG =-1mA; VDS =0V; Tj < 175 °C; Tj >-55 °C 20 22 - V IGSS gate leakage current VDS =0V; VGS =10V; Tj = 25 °C - 22 1000 nA VDS =0V; VGS =-10 V; Tj = 25 °C - 22 1000 nA VDS =0V; VGS =10V; Tj = 175 °C --10 µA VDS =0V; VGS =-10 V; Tj = 175 °C --10 µA RDSon drain-source on-state resistance VGS =10V; ID =50A; Tj =25°C; see Figure 7; see Figure 8 -5.8 7 m Ω VGS =10V; ID =50A; Tj = 175 °C; see Figure 7; see Figure 8 --14 m Ω ID/Isense ratio of drain current to sense current VGS >10V; Tj >-55 °C; Tj < 175 °C 450 500 550 Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =44V; VGS =10V; Tj =25°C; see Figure 14 -116 - nC QGS gate-source charge - 19 - nC QGD gate-drain charge - 50 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 12 - 4500 - pF Coss output capacitance - 960 - pF Crss reverse transfer capacitance - 510 - pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω; Tj =25 °C -36 - ns tr rise time - 115 - ns td(off) turn-off delay time - 159 - ns tf fall time - 111 - ns LD internal drain inductance from upper edge of drain mounting base to centre of die; Tj =25°C -2.5 - nH LS internal source inductance from source lead to source bond pad; Tj =25°C -7.5 - nH |
Аналогичный номер детали - BUK7107-55AIE_15 |
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Аналогичное описание - BUK7107-55AIE_15 |
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