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BTA04A датащи(PDF) 2 Page - Unisonic Technologies

номер детали BTA04A
подробное описание детали  4A TRIACS
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
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BTA04A датащи(HTML) 2 Page - Unisonic Technologies

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BTA04A
TRIACS
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R401-062.C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
RMS On-State Current
(360° Conduction Angle)
TC=90°C
IT(RMS)
4
A
tp=8.3ms
42
A
Non Repetitive Surge Peak On-State
Current (TJ initial=25°C)
tp=10ms
ITSM
40
A
I
2t Value
tp=10ms
I
2t
8
A
2s
Repetitive F=50Hz
10
A/µs
Critical Rate of Rise of On-State Current:
IG=50mA, dIG/dt=0.1A/µs
Non Repetitive
dI/dt
50
A/µs
Repetitive Peak Off-State Voltage (TJ=110°C)
VDRM/VRRM
600
V
Peak Gate Current
tp=20µs
IGM
4
A
Peak Positive Gate Voltage
tp=20µs
VGM
16
V
Peak Positive Gate Power Dissipation
tp=20µs
PGM)
40
W
Average Gate Power Dissipation
PG(AV)
1
W
Operating Junction Temperature
TJ
-40~+110
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
60
°C/W
Junction to Case (AC)
θJC
2.7
°C/W
ELECTRICAL CHARACTERISTICS (TJ= 25°C, unless otherwise specified)
FOR SNUBBERLESS AND LOGIC LEVEL (3 QUADRANTS)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Gate Trigger Current
IGT
I-II-III
10
mA
Gate Trigger Voltage
VGT
VD=12V (DC)
RL=33Ω TJ=25°C
I-II-III
1.5
V
Gate Non-Trigger Voltage
VGD
VD=VDRM, RL=3.3kΩ,
TJ=110°C
I-II-III
0.2
V
Time Gate Trigger
tGT
VD=VDRM, IG=40mA,
dIG/dt=0.5A/µs, TJ=25°C
I-II-III
2
µs
Holding Current (Note 1)
IH
IT=100mA, Gate Open, TJ=25°C
15
mA
I-III
10
mA
Latching Current
IL
IG=1.2IGT, TJ=25°C
II
20
mA
Peak On-State Voltage
(Note 1)
VTM
ITM=5.5A, tp=380μs,
TJ=25°C
1.65
V
IDRM
VDRM Rated, TJ=25°C
0.01
mA
Repetitive Peak Off-State Current
IRRM
VRRM Rated, TJ=110°C
0.75
mA
Critical Rate of Rise of Off-State Voltage
(Note 1)
dV/dt
Linear Slope up to VD=67%VDRM,
Gate Open, TJ=110°C
10
V/µs
Critical Rate of Rise of Off-State Voltage
at Commutation (Note 1)
(dV/dt)c
(dI/dt)c=1.8A/ms, TJ=110°C
1
V/µs
Note: For either polarity of electrode MT2 voltage with reference to electrode MT1.


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