SI2372DS datasheet(1/10 Pages) TFUNK

номер детали	SI2372DS

подробное описание детали	N-Channel 30 V (D-S) MOSFET

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Si2372DS

www.vishay.com

Vishay Siliconix

S14-0769-Rev. A, 14-Apr-14

1

Document Number: 63244

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET

Marking Code: F4

Ordering Information:

Si2372DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• TrenchFET® power MOSFET

• 100 % Rg tested

• Material categorization:

For

definitions

of

compliance

please

see

www.vishay.com/doc?99912

APPLICATIONS

•DC/DC converter

•Load switch

• Power management

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under steady state conditions is 175 °C/W.

d. TC = 25 °C

PRODUCT SUMMARY

VDS (V)

RDS(on) (

Ω) MAX.

ID (A) d

Qg (TYP.)

30

0.033 at VGS = 10 V

5.3

2.9 nC

0.038 at VGS = 6 V

4.9

0.043 at VGS = 4.5 V

4.6

Top View

SOT-23 (TO-236)

1

G

2

S

D

3

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

5.3

A

TC = 70 °C

4.2

TA = 25 °C

4 a, b

TA = 70 °C

3.2 a, b

Pulsed Drain Current (t = 100 μs)

IDM

25

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.4

TA = 25 °C

0.8 a, b

Maximum Power Dissipation

TC = 25 °C

PD

1.7

W

TC = 70 °C

1.1

TA = 25 °C

0.96 a, b

TA = 70 °C

0.62 a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient a, c

t

≤ 5 s

RthJA

100

130

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

60

75

Аналогичный номер детали - SI2372DS

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI2372DS	257Kb / 10P	N-Channel 30 V (D-S) MOSFET Rev. A, 14-Apr-14
Guangdong Kexin Industr...	SI2372DS	1Mb / 5P	N-Channel MOSFET
Guangdong Kexin Industr...	SI2372DS-HF	2Mb / 5P	N-Channel MOSFET
VBsemi Electronics Co.,...	SI2372DS-T1-GE3	475Kb / 9P	N-Channel 30-V (D-S) MOSFET

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Аналогичное описание - SI2372DS

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
	SUU50N03-12P	60Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI4894DY	129Kb / 3P	N-Channel 30-V (D-S) MOSFET 17-May-04
	SI4406DY	38Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. C, 26-May-03
	SI7380DP	180Kb / 3P	N-Channel 30-V (D-S) MOSFET 24-May-04
	SI733ADP	61Kb / 5P	N-Channel 30-V (D-S) MOSFET Rev. A, 25-Oct-04
	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA14DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 12-Mar-12

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