SI5458DU datasheet(1/9 Pages) TFUNK

номер детали	SI5458DU

подробное описание детали	N-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si5458DU

New Product

Document Number: 65019

S09-1392-Rev. A, 20-Jul-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

d, e

Qg (Typ.)

30

0.041 at VGS = 10 V

6

2.8 nC

0.051 at VGS = 4.5 V

6

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under steady state conditions is 72 °C/W.

d. Based on TC = 25 °C.

e. Package limited.

f. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

6e

A

TC = 70 °C

6e

TA = 25 °C

6a, b, e

TA = 70 °C

6a, b, e

Pulsed Drain Current

IDM

20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

6

TA = 25 °C

2.9a, b

Maximum Power Dissipation

TC = 25 °C

PD

10.4

W

TC = 70 °C

6.7

TA = 25 °C

3.5a, b

TA = 70 °C

2.2a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)f, g

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 5 s

RthJA

30

36

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

10

12

Marking Code

AP

XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si5458DU-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

(1, 2, 3, 6, 7, 8)

(4)

(5)

Bottom View

PowerPAK® ChipFET Single

D

G

1

2

8

7

6

5

D

S

3

4

S

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch

•

HDD DC/DC

Аналогичный номер детали - SI5458DU

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI5458DU	157Kb / 10P	N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09
Vishay Siliconix	SI5458DU-T1-GE3	157Kb / 10P	N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09

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Аналогичное описание - SI5458DU

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Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
	SUU50N03-12P	60Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. A, 15-Sep-03
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	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
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