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SI7228DN датащи(PDF) 1 Page - Vishay Telefunken |
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SI7228DN датащи(HTML) 1 Page - Vishay Telefunken |
1 / 13 page Vishay Siliconix Si7228DN Document Number: 64806 S09-0666-Rev. A, 20-Apr-09 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) f Qg (Typ.) 30 0.020 at VGS = 10 V 26 4.1 nC 0.025 at VGS = 4.5 V 23 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 3.30 mm 3.30 mm PowerPAK® 1212-8 Bottom View Ordering Information: Si7228DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 94 °C/W. f. Based on TC = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 26 A TC = 70 °C 21 TA = 25 °C 8.8a, b TA = 70 °C 7a, b Pulsed Drain Current IDM 35 Continuous Source-Drain Diode Current TC = 25 °C IS 19 TA = 25 °C 2.2a, b Single Pulse Avalanche Current L = 0.1 mH IAS 14 Single Pulse Avalanche Energy EAS 9.8 mJ Maximum Power Dissipation TC = 25 °C PD 23 W TC = 70 °C 14.8 TA = 25 °C 2.6a, b TA = 70 °C 1.7a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, e t ≤ 10 s RthJA 38 48 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4.3 5.4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Synchronous Rectification • Notebook System Power • POL • Low Current DC/DC |
Аналогичный номер детали - SI7228DN |
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Аналогичное описание - SI7228DN |
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