поискавой системы для электроныых деталей |
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FW344A-TL-2W датащи(PDF) 1 Page - ON Semiconductor |
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FW344A-TL-2W датащи(HTML) 1 Page - ON Semiconductor |
1 / 9 page Features • ON-resistance Nch : RDS(on)1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) • 4V drive • Halogen free compliance • Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 V Gate-to-Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID 4.5 --3.5 A Drain Current (PW≤10μs) IDP Duty cycle≤1% 5 --4 A Drain Current (PW≤10μs) IDP Duty cycle≤1% 18 --14 A Allowable Power Dissipation PD When mounted on ceramic substrate (2000mm2×0.8mm) 1unit 1.4 W Total Dissipation PT When mounted on ceramic substrate (2000mm2×0.8mm) 1.7 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C This product is designed to “ESD immunity < 200V *”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7072-001 Ordering number : EN8998C Product & Package Information • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 2,500 pcs./reel Packing Type : TL Marking Electrical Connection 4.9 0.22 14 5 8 0.445 1.27 0.254 (GAGE PLANE) 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SOIC8 TL FW344 LOT No. A 8765 1234 FW344A-TL-2W 91212 TKIM/62712 TKIM/31412 TKIM/22212PA TKIM TC-00002693 No.8998-1/9 http://onsemi.com Semiconductor Components Industries, LLC, 2013 July, 2013 FW344A Power MOSFET 30V, 4.5A, 64mΩ, –30V, –3.5A, 102mΩ, Complementary Dual SOIC8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
Аналогичный номер детали - FW344A-TL-2W |
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Аналогичное описание - FW344A-TL-2W |
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