DMG2302UQ-13 datasheet(3/6 Pages) DIODES

номер детали	DMG2302UQ-13

подробное описание детали	N-CHANNEL ENHANCEMENT MODE MOSFET

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производитель	DIODES [Diodes Incorporated]

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3 / 6 page

DMG2302UQ

Document number: DS38036 Rev. 1 - 2

3 of 6

www.diodes.com

July 2015

DMG2302UQ

0

2

4

6

8

10

0

0.5

1

1.5

2

2.5

3

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 1.2V

GS

V

= 1.5V

GS

V

= 2.0V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 8.0V

GS

0

2

4

6

8

10

0

0.5

1

1.5

2

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

V

= 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

0.02

0.025

0.03

0.035

0.04

0.045

0.05

0.055

0.06

0.1

1

10

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

V

= 1.8V

GS

V

= 4.5V

GS

V

= 2.5V

GS

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

0.05

0.055

0.06

0

2

4

6

8

10

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

V

= 4.5V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Fig. 5 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE (°C)

J

0.6

0.8

1.0

1.2

1.4

1.6

1.8

V

= 4.5V

I = 10A

GS

D

V

= 2.5V

I = 5A

GS

D

Fig. 6 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE (°C)

J

0

0.01

0.02

0.03

0.04

0.06

0.05

V

= 4.5V

I = 10A

GS

D

V

= 2.5V

I = 5A

GS

D

Аналогичный номер детали - DMG2302UQ-13

производитель	номер детали	датащи	подробное описание детали
Diodes Incorporated	DMG2302U	165Kb / 6P	N-CHANNEL ENHANCEMENT MODE MOSFET
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Diodes Incorporated	DMG2302U	493Kb / 6P	N-CHANNEL ENHANCEMENT MODE MOSFET
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Аналогичное описание - DMG2302UQ-13

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DMG2302UQ-13 датащи(PDF) 3 Page - Diodes Incorporated

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Аналогичный номер детали - DMG2302UQ-13

Аналогичное описание - DMG2302UQ-13

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