© 1997 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BCW68G Rev. 1.1.0

1

March 2014

BCW68G

PNP General-Purpose Amplifier

Ordering Information

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Notes:

1. These ratings are based on a maximum junction temperature of 150

°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Part Number

Marking

Package

Packing Method

BCW68G

DG

SOT-23 3L

Tape and Reel

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

-45

V

Collector-Base Voltage

-60

V

Emitter-Base Voltage

-5

V

Collector Current - Continuous

-800

mA

Junction and Storage Temperature Range

-55 to +150

°C

SOT-23

Mark: DG

C

B

E

Description

This device is designed for general-purpose amplifier

and switching applications at currents to 500 mA.

Sourced from process 63.