BC808W datasheet(5/5 Pages) INFINEON

номер детали	BC808W

подробное описание детали	PNP Silicon AF Transistors

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производитель	INFINEON [Infineon Technologies AG]

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BC807W, BC808W

Nov-29-2001

5

DC current gain hFE = f(IC)

VCE = 1V

10

EHP00216

-1

3

10

mA

0

10

3

10

5

10

0

10

1

10

1

C

FE

h

Ι

2

10

2

10

˚C

100

5

25 ˚C

-50 ˚C

Transition frequency fT = f (IC)

VCE = 5V

10

EHP00210

03

10

mA

1

10

3

10

5

10

1

10

2

10

2

C

T

f

MHz

Ι

Collector-emitter saturation voltage

IC = f (VCEsat), hFE = 10

0

10

EHP00215

CEsat

V

0.4

V

0.8

-1

100

101

3

10

5

Ι

C

mA

5

2

10

0.2

0.6

-50

25

150 ˚C

˚C

Base-emitter saturation voltage

IC = f(VBEsat), hFE = 10

0

10

EHP00214

BEsat

V

2.0

V

4.0

-1

100

101

3

10

5

Ι

C

mA

5

2

10

1.0

3.0

˚C

-50

25 ˚C

˚C

150

Аналогичный номер детали - BC808W

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