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BC857BW датащи(PDF) 2 Page - Infineon Technologies AG

номер детали BC857BW
подробное описание детали  PNP Silicon AF Transistors
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BC857BW датащи(HTML) 2 Page - Infineon Technologies AG

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BC856W...BC860W
2
Dec-11-2001
Maximum Ratings
Parameter
Symbol BC856W BC857W
BC860W
BC858W
BC859W
Unit
Collector-emitter voltage
VCEO
65
45
30
V
Collector-base voltage
VCBO
80
50
30
Collector-emitter voltage
VCES
80
50
30
Emitter-base voltage
VEBO
5
5
5
DC collector current
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
200
Peak emitter current
200
IEM
Total power dissipation
, TS = 124 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
105
K/W
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BC856W
BC857/860W
BC858/859W
V(BR)CEO
65
45
30
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
BC856W
BC857/860W
BC858/859W
V(BR)CBO
80
50
30
-
-
-
-
-
-
1For calculation of RthJA please refer to Application Note Thermal Resistance


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