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BC847W датащи(PDF) 4 Page - Infineon Technologies AG

номер детали BC847W
подробное описание детали  NPN Silicon AF Transistors
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BC847W датащи(HTML) 4 Page - Infineon Technologies AG

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BC846W...BC850W
4
Dec-11-2001
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
fT
-
250
-
MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
-
2
3
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
-
10
15
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-gr.A
hFE-gr.B
hFE-gr.C
h11e
-
-
-
2.7
4.5
8.7
-
-
-
k

Open-circuit reverse voltage transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-gr.A
hFE-gr.B
hFE-gr.C
h12e
-
-
-
1.5
2
3
-
-
-
10-4
Short-circuit forward current transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-gr.A
hFE-gr.B
hFE-gr.C
h21e
-
-
-
200
330
600
-
-
-
-
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-gr.A
hFE-gr.B
hFE-gr.C
h22e
-
-
-
18
30
60
-
-
-
S
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 k,
f
= 1 kHz,
 f = 200 Hz
BC846W
BC847W
BC848W
F
-
-
10
dB
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 k,
f
= 1 kHz,
 f = 200 Hz
BC849W
BC850W
F
-
-
1.2
1
4
4
Equivalent noise voltage
IC = 200 µA, VCE = 5 V, RS = 2 k,
f = 10 ... 50 Hz
BC850W
Vn
-
-
0.135 µV


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