поискавой системы для электроныых деталей |
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SI52111-B6 датащи(PDF) 4 Page - Silicon Laboratories |
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SI52111-B6 датащи(HTML) 4 Page - Silicon Laboratories |
4 / 20 page Si52111 -B5/B6 4 Rev 1.2 1. Electrical Specifications Table 1. Recommended Operating Conditions Parameter Symbol Test Condition Min Typ Max Unit Supply Voltage (extended) VDD(extended) 3.3 V ± 5% 3.13 3.3 3.46 V Supply Voltage (commercial) VDD(commercial) 3.3 V ± 10% 2.97 3.3 3.63 V Table 2. DC Electrical Specifications Parameter Symbol Test Condition Min Typ Max Unit Operating Voltage VDD 3.3 V ± 10% 2.97 3.30 3.63 V Operating Supply Current IDD Full Active — — 13 mA Input Pin Capacitance CIN Input Pin Capacitance — 3 5 pF Output Pin Capacitance COUT Output Pin Capacitance — — 5 pF Table 3. AC Electrical Specifications Parameter Symbol Test Condition Min Typ Max Unit Crystal Long-term Accuracy LACC Measured at VDD/2 differential — — 250 ppm Clock Input CLKIN Duty Cycle TDC Measured at VDD/2 45 — 55 % CLKIN Rise and Fall Times TR/TF Measured between 0.2 VDD and 0.8 VDD 0.5 — 4.0 V/ns CLKIN Cycle-to-Cycle Jitter TCCJ Measured at VDD/2 — — 250 ps CLKIN Long Term Jitter TLTJ Measured at VDD/2 — — 350 ps Input High Voltage VIH XIN/CLKIN pin 2 — VDD+0.3 V Input Low Voltage VIL XIN/CLKIN pin — — 0.8 V Input High Current IIH XIN/CLKIN pin, VIN = VDD —— 35 uA Input Low Current IIL XIN/CLKIN pin, 0 < VIN <0.8 –35 — — uA DIFF Clocks Duty Cycle TDC Measured at 0 V differential 45 — 55 % Skew TSKEW Measured at 0 V differential — — 60 ps Output Frequency FOUT VDD = 3.3 V — 100 — MHz Frequency Accuracy FACC All output clocks —— 100 ppm Slew Rate tr/f2 Measured differentially from ±150 mV 0.6 — 4.0 V/ns Notes: 1. Visit www.pcisig.com for complete PCIe specifications. 2. Gen 4 specifications based on the PCI-Express Base Specification 4.0 rev. 0.5 3. Download the Silicon Labs PCIe Clock Jitter Tool at www.silabs.com/pcie-learningcenter. |
Аналогичный номер детали - SI52111-B6 |
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Аналогичное описание - SI52111-B6 |
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