STGW60H65DRF datasheet(4/13 Pages) STMICROELECTRONICS

номер детали	STGW60H65DRF

подробное описание детали	60 A, 650 V field stop trench gate IGBT with Ultrafast diode

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Electrical characteristics

STGW60H65DRF

4/13

DocID022346 Rev 6

Table 7. Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon

(1)

Eoff

(2)

Ets

1.

Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 23. If the IGBT is offered

in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the

same temperature (25 °C and 125 °C).

2.

Turn-off losses include also the tail of the collector current.

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCE = 400 V, IC = 60 A,

RG = 10 , VGE = 15 V

-

0.94

1.06

2.0

-

mJ

Eon

(1)

Eoff

(2)

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCE = 400 V, IC = 60 A,

RG = 10 , VGE = 15 V

TJ = 125 °C

-

1.48

1.4

2.88

-

mJ

Table 8. Collector-emitter diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VF

Forward on-voltage

IF = 60 A

IF = 60 A, TJ = 150 °C

-

3.7

2.2

4.8

V

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 60 A, VR = 400 V,

di/dt = 1700 A/µs

-

19

200

15.5

-

ns

nC

A

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 60 A, VR = 400 V,

di/dt = 1630 A/µs

TJ = 125 °C

-

34

780

46

-

ns

nC

A

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Аналогичное описание - STGW60H65DRF

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGW60H65F	1Mb / 14P	60 A, 650 V field stop trench gate IGBT January 2013
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STMicroelectronics	STGW50H60DF	1Mb / 12P	50 A, 600 V field stop trench gate IGBT with Ultrafast diode July 2012 Rev 5
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