поискавой системы для электроныых деталей |
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BTS660P датащи(PDF) 5 Page - Infineon Technologies AG |
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BTS660P датащи(HTML) 5 Page - Infineon Technologies AG |
5 / 16 page Data Sheet BTS660P Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified min typ max Infineon Technologies AG Page 5 2003-Oct-01 Protection Functions 16) Short circuit current limit (Tab to pins 1,2,6,7) VON = 24 V, time until shutdown max. 300 µs Tc =-40°C: see page 8 and 13 Tc =25°C: Tc =+150°C: IL(SC) IL(SC) IL(SC) -- -- 50 90 90 80 180 -- -- A Short circuit shutdown delay after input current positive slope, VON > VON(SC) 17) min. value valid only if input "off-signal" time exceeds 30 µs td(SC) 80 -- 350 µs Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. over voltage) IL= 40 mA VON(CL) 62 65 72 V Short circuit shutdown detection voltage 17) (pin 4 to pins 1,2,6,7) VON(SC) -- 6 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆T jt -- 10 -- K Reverse Battery Reverse battery voltage 18 ) -Vbb -- -- 42 V On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25°C: Vbb =-12V, VIN=0, IL=- 20 A, RIS =1 k Ω Tj = 150°C: RON(rev) -- 8.8 -- 10.5 20 m Ω Integrated resistor in Vbb line Tj = 25C: Tj =150°C: Rbb 90 105 120 125 135 150 Ω 16 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 17 ) not subject to production test, specified by design 18 ) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! To reduce the power dissipation at the integrated R bb resistor an input resistor is recommended as described on page 9. |
Аналогичный номер детали - BTS660P |
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Аналогичное описание - BTS660P |
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