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STAC9200 датащи(PDF) 1 Page - STMicroelectronics |
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STAC9200 датащи(HTML) 1 Page - STMicroelectronics |
1 / 14 page This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. April 2014 DocID025416 Rev 2 1/14 STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Figure 1. Pin connection Features • Improved ruggedness: V(BR)DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz • In compliance with the 2002/95/EC European directive • ST air-cavity STAC® packaging technology Description The STAC9200 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband applications in the HF to 1300 MHz frequency range. The STAC9200 benefits from the latest generation of efficient STAC® package technology. 1 1 2 3 3 1. Drain 3. Gate 2. Source (bottom side) STAC244B Air cavity Table 1. Device summary Order code Marking Package Packaging STAC9200 STAC9200(1) STAC244B Plastic tray 1. For more details please refer to Chapter 8: Marking, packing and shipping specifications. www.st.com |
Аналогичный номер детали - STAC9200 |
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Аналогичное описание - STAC9200 |
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