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STFI9N60M2 датащи(PDF) 1 Page - STMicroelectronics |
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STFI9N60M2 датащи(HTML) 1 Page - STMicroelectronics |
1 / 15 page This is information on a product in full production. March 2014 DocID024728 Rev 2 1/15 STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Q g Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. . TO-220FP 1 2 3 1 2 3 I2PAKFP (TO-281) AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF9N60M2 650 V 0.78 Ω 5.5 A STFI9N60M2 Table 1. Device summary Order codes Marking Package Packaging STF9N60M2 9N60M2 TO-220FP Tube STFI9N60M2 I2PAKFP www.st.com |
Аналогичный номер детали - STFI9N60M2 |
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Аналогичное описание - STFI9N60M2 |
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