поискавой системы для электроныых деталей |
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STGW30M65DF2 датащи(PDF) 8 Page - STMicroelectronics |
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STGW30M65DF2 датащи(HTML) 8 Page - STMicroelectronics |
8 / 19 page Electrical characteristics STGW30M65DF2, STGWA30M65DF2 8/19 DocID027768 Rev 3 Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Normalized V(BR)CES vs. junction temperature 10 20 30 40 1 10 Ic [A] f [kHz] G Ω rectangular current shape, (duty cycle=0.5, V CC = 400V, R =10 , V GE = 0/15 V, TJ =175°C) Tc=80°C Tc=100 °C 50 60 GIPD100420151129FSR IC 100 10 1 1 VCE(V) (A) 10 1 µs 10 µs 1 ms Single pulse Tc= 25°C, TJ ≤ 175°C VGE= 15V 100 100 µs GIPD100420151137FSR IC 60 40 20 0 6 7 VGE(V) (A) 10 80 8 9 100 11 5 VCE= 5V TJ= 25 °C TJ= 175 °C GIPD100420151152FSR VF 1.5 1 0.5 0 0 IF(A) (V) 20 TJ= 175°C 40 60 80 TJ= 25°C TJ= -40°C 100 3 2.5 2 GIPD100420151209FSR VGE(th) 1.1 1.0 -50 TJ(°C) (norm) 0 50 100 150 IC= 500µA VCE= VGE 0.7 0.8 0.9 GIPD100420151232FSR V(BR)ces 1.1 1.05 -50 TJ(°C) (norm) 0 50 100 150 IC= 2mA 0.9 0.95 1.0 GIPD100420151240FSR |
Аналогичный номер детали - STGW30M65DF2 |
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Аналогичное описание - STGW30M65DF2 |
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