STGWA30M65DF2 datasheet(10/19 Pages) STMICROELECTRONICS

номер детали	STGWA30M65DF2

подробное описание детали	Trench gate field-stop IGBT, M series 650 V, 30 A low loss

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10 / 19 page

Electrical characteristics

STGW30M65DF2, STGWA30M65DF2

10/19

DocID027768 Rev 3

Figure 20: Short-circuit time and current vs.

VGE

Figure 21: Switching times vs. collector

current

Figure 22: Switching times vs. gate

resistance

Figure 23: Reverse recovery current vs. diode

current slope

Figure 24: Reverse recovery time vs. diode

current slope

Figure 25: Reverse recovery charge vs. diode

current slope

tsc

15

10

5

10

VGE(V)

12

(µs)

11

VCC

≤ 400V, TJ ≤ 150°C

0

tSC

ISC

13

20

ISC(A)

60

30

90

120

14

15

9

150

GIPD100420151351FSR

t

IC(A)

(ns)

0

10

20

1

30

tf

TJ= 175°C, VGE= 15V,

RG

= 10Ω, VCC= 400V

10

tr

td(on)

40

50

100

td(off)

GIPD100420151403FSR

t

RG

(Ω)

(ns)

0

20

40

10

60

tf

TJ= 175°C, VGE= 15V,

IC= 30A, VCC= 400V

80

100

td(on)

td(off)

tr

GIPD100420151412FSR

Irm

15

di/dt(A/µs)

(A)

200

600

1000

25

1400

IF = 30A, VCC = 400V

VGE = 15V

1800

30

=175°C

35

20

TJ

40

GIPD100420151417FSR

trr

180

di/dt(A/µs)

(ns)

200

600

1000

220

1400

IF = 30A, VCC = 400V,

VGE = 15V

1800

240

=175°C

260

200

TJ

280

GIPD100420151434FSR

Qrr

2.5

di/dt(A/µs)

(µC)

200

600

1000

2.8

1400

IF = 30A, VCC = 400V,

VGE = 15V

1800

2.9

=175°C

2.7

TJ

2.6

GIPD100420151442FSR

Аналогичный номер детали - STGWA30M65DF2

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGWA30H60DFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed November 2016 Rev 3
	STGWA30H65DFB2	513Kb / 15P	Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package DS13189 - Rev 2 - February 2020
	STGWA30N120KD	423Kb / 15P	30 A, 1200 V short circuit rugged IGBT with Ultrafast diode February 2012

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Аналогичное описание - STGWA30M65DF2

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGF15M65DF2	910Kb / 15P	Trench gate field-stop IGBT M series, 650 V 15 A low loss
	STGP20M65DF2	520Kb / 16P	Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT DS11374 - Rev 3 - October 2018
	STGW75M65DF2	1,005Kb / 17P	Trench gate field-stop IGBT, M series 650 V, 75 A low loss
	STGYA120M65DF2	958Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 120 A low loss
	STGF4M65DF2	983Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 4 A low loss
	STGWA50M65DF2	971Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 50 A low loss
	STGD4M65DF2	1Mb / 19P	Trench gate field-stop IGBT, M series 650 V, 4 A low loss
	STGB4M65DF2	1Mb / 18P	Trench gate field-stop IGBT, M series 650 V, 4 A low loss
	STGD4M65DF2	448Kb / 20P	Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT Rev 5 - December 2018
	STGP6M65DF2	958Kb / 17P	Trench gate field-stop IGBT, M series 650 V, 6 A low loss

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STGWA30M65DF2 датащи(PDF) 10 Page - STMicroelectronics

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Аналогичный номер детали - STGWA30M65DF2

Аналогичное описание - STGWA30M65DF2

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