SPI73N03S2L-08 datasheet(3/8 Pages) INFINEON

номер детали	SPI73N03S2L-08

подробное описание детали	OptiMOS Power-Transistor

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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3 / 8 page

2003-04-24

Page 3

SPI73N03S2L-08

SPP73N03S2L-08,SPB73N03S2L-08

Electrical Characteristics

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

g

fs

VDS≥2*ID*RDS(on)max,

ID=62A

32

63

-

S

Input capacitance

Ciss

VGS=0V, VDS =25V,

f=1MHz

-

1290

1710 pF

Output capacitance

C

oss

-

500

670

Reverse transfer capacitance

Crss

-

130

190

Turn-on delay time

td(on)

VDD=15V, VGS =10V,

ID=18A,

RG=4.7Ω

-

7.7

11.6

ns

Rise time

t

r

-

20

30

Turn-off delay time

td(off)

-

31.5

47.3

Fall time

tf

-

19

28.5

Gate Charge Characteristics

Gate to source charge

Q

gs

VDD=24V, ID=36A

-

4

5

nC

Gate to drain charge

Qgd

-

12

18

Gate charge total

Q

g

VDD=24V, ID=36A,

VGS=0 to 10V

-

34.7

46.2

Gate plateau voltage

V(plateau) VDD=24V, ID=36A

-

3.6

-

V

Reverse Diode

Inverse diode continuous

forward current

I

S

TC=25°C

-

73

A

Inv. diode direct current, pulsed

ISM

-

320

Inverse diode forward voltage

V

SD

VGS=0V, IF=73A

-

0.96

1.28

V

Reverse recovery time

trr

VR=15V, IF=lS,

diF/dt=100A/µs

-

27

40

ns

Reverse recovery charge

Qrr

-

21

31

nC

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SPI73N03S2L-08 датащи(PDF) 3 Page - Infineon Technologies AG

SPI73N03S2L-08 датащи(HTML) 3 Page - Infineon Technologies AG

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