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CSD19505KTT датащи(PDF) 3 Page - Texas Instruments

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номер детали CSD19505KTT
подробное описание детали  80 V N-Channel NexFET Power MOSFET
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD19505KTT
www.ti.com
SLPS587 – MARCH 2016
Product Folder Links: CSD19505KTT
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
80
V
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = 64 V
1
μA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250 μA
2.2
2.6
3.2
V
RDS(on)
Drain-to-source on-resistance
VGS = 6 V, ID = 100 A
2.9
3.8
m
VGS = 10 V, ID = 100 A
2.6
3.1
m
gfs
Transconductance
VDS = 8 V, ID = 100 A
262
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
VGS = 0 V, VDS = 40 V, ƒ = 1 MHz
6090
7920
pF
Coss
Output capacitance
1600
2080
pF
Crss
Reverse transfer capacitance
26
34
pF
RG
Series gate resistance
1.4
2.8
Qg
Gate charge total (10 V)
VDS = 40 V, ID = 100 A
76
nC
Qgd
Gate charge gate-to-drain
11
nC
Qgs
Gate charge gate-to-source
25
nC
Qg(th)
Gate charge at Vth
15
nC
Qoss
Output charge
VDS = 40 V, VGS = 0 V
214
nC
td(on)
Turn on delay time
VDS = 40 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω
11
ns
tr
Rise time
5
ns
td(off)
Turn off delay time
22
ns
tf
Fall time
3
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = 100 A, VGS = 0 V
0.9
1.1
V
Qrr
Reverse recovery charge
VDS= 40 V, IF = 100 A,
di/dt = 300 A/
μs
400
nC
trr
Reverse recovery time
88
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-case thermal resistance
0.5
°C/W
RθJA
Junction-to-ambient thermal resistance
62
°C/W


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