поискавой системы для электроныых деталей |
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CSD19505KTT датащи(PDF) 3 Page - Texas Instruments |
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CSD19505KTT датащи(HTML) 3 Page - Texas Instruments |
3 / 13 page 3 CSD19505KTT www.ti.com SLPS587 – MARCH 2016 Product Folder Links: CSD19505KTT Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 80 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 64 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 2.2 2.6 3.2 V RDS(on) Drain-to-source on-resistance VGS = 6 V, ID = 100 A 2.9 3.8 m Ω VGS = 10 V, ID = 100 A 2.6 3.1 m Ω gfs Transconductance VDS = 8 V, ID = 100 A 262 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 40 V, ƒ = 1 MHz 6090 7920 pF Coss Output capacitance 1600 2080 pF Crss Reverse transfer capacitance 26 34 pF RG Series gate resistance 1.4 2.8 Ω Qg Gate charge total (10 V) VDS = 40 V, ID = 100 A 76 nC Qgd Gate charge gate-to-drain 11 nC Qgs Gate charge gate-to-source 25 nC Qg(th) Gate charge at Vth 15 nC Qoss Output charge VDS = 40 V, VGS = 0 V 214 nC td(on) Turn on delay time VDS = 40 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω 11 ns tr Rise time 5 ns td(off) Turn off delay time 22 ns tf Fall time 3 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V Qrr Reverse recovery charge VDS= 40 V, IF = 100 A, di/dt = 300 A/ μs 400 nC trr Reverse recovery time 88 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance 0.5 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W |
Аналогичный номер детали - CSD19505KTT |
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Аналогичное описание - CSD19505KTT |
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