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SAV-551 датащи(PDF) 2 Page - Mini-Circuits |
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SAV-551 датащи(HTML) 2 Page - Mini-Circuits |
2 / 13 page E-PHEMT SAV-551+ Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 2 of 13 Symbol Parameter Condition Min. Typ. Max. Units DC Specifications V GS Operational Gate Voltage V DS=3V, IDS=15 mA 0.22 0.34 0.46 V V TH Threshold Voltage V DS=3V, IDS=4 mA 0.18 0.26 0.38 V I DSS Saturated Drain Current V DS=3V, VGS=0 V 1.0 5.0 µA G M Transconductance V DS=3V, Gm=∆ IDS/∆VGS ∆V GS=VGS1-VGS2 V GS1=VGS at IDS=15 mA V GS2=VGS1+0.05V — — 215 — — — — 251 — — — — 285 — — mS I GSS Gate leakage Current V GD=VGS=-3V 95 µA RF Specifications, Z 0=50 Ohms (Figure 1) NF(1) Noise Figure V DS=3V, IDS=15 mA f=0.9 GHz 0.5 — dB f=2.0 GHz 0.6 0.9 f=3.9 GHz 1.0 — f=5.8 GHz 1.8 — V DS=4V, IDS=15 mA f=2.0 GHz 0.6 — Gain Gain V DS=3V, IDS=15 mA f=0.9 GHz — 20.9 dB f=2.0 GHz 14.4 15.9 17.5 f=3.9 GHz — 11.2 — f=5.8 GHz — 7.6 — V DS=4V, IDS=15 mA f=2.0 GHz — 16.0 — OIP3 Output IP3 V DS=3V, IDS=15 mA f=0.9 GHz — 22.4 dBm f=2.0 GHz 20.0 24.3 f=3.9 GHz — 26.9 f=5.8 GHz — 28.5 V DS=4V, IDS=15 mA f=2.0 GHz — 24.4 P1dB(2) Power output at 1 dB Compression V DS=3V, IDS=15 mA f=0.9 GHz — 17.2 dBm f=2.0 GHz 16.0 17.5 f=3.9 GHz — 18.5 f=5.8 GHz — 17.5 V DS=4V, IDS=15 mA f=2.0 GHz — 20.0 Notes: (1) Includes test board loss (tested on Mini-Circuits TB-471+ test board) (2) Drain current was allowed to increase during compression measurements. (3) Operation of this device above any one of these parameters may cause permanent damage. (4) Assumes DC quiescent conditions. (5) I GS is limited to 2 mA during test. Absolute Maximum Ratings(3) Symbol Parameter Max. Units VDS(4) Drain-Source Voltage 5 V VGS(4) Gate-Source Voltage -5 to 0.7 V VGD(4) Gate-Drain Voltage -5 to 0.7 V IDS(4) Drain Current 100 mA IGS Gate Current 2 mA PDISS Total Dissipated Power 360 mW PIN(5) RF Input Power 17 dBm TCH Channel Temperature 150 °C TOP Operating Temperature -40 to 85 °C TSTG Storage Temperature -65 to 150 °C ΘJC Thermal Resistance 160 °C/W Electrical Specifications at T AMB=25°C, Frequency 0.45 to 6 GHz |
Аналогичный номер детали - SAV-551 |
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Аналогичное описание - SAV-551 |
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