CDBN120-HF Thru. CDBN1100-HF

Forward current: 1.0A

Reverse voltage: 20 to 100V

RoHS Device

QW-JB057

Page 1

REV:B

Features

- Low power loss, High efficiency.

- High current capability, low VF

Mechanical Data

- Polarity: Laser cathode band marking.

- Weight: 0.012 grams(approx).

Parameter

Unit

Non-repetitive peak reverse voltage

Average forward current

Operating junction temperature range

Storage temperature

Symbol

CDBN120-HF

CDBN140-HF

CDBN160-HF

20

40

1

20

-55 to +125

-55 ~ +150

60

V

A

A

°C

°C

Parameter

Unit

Reverse peak reverse current (Note1)

Forward voltage (Note1)

Symbol

Typ.

Max.

mA

V

ºC/W

Conditions

CDBN160-HF

Junction to lead (Note 2)

0.2

0.32

0.40

0.46

0.35

0.48

0.62

Comchip Technology CO., LTD.

CDBN1100-HF

100

Peak forward surge current

@8.3ms single half sine-wave

-55 to +150

CDBN1100-HF

Min.

0.50

0.70

0.45

0.66

0.76

0.85

Type

Junction capacitance

pF

Cj

0.015

28

110

Thermal resistance

Junction to ambient (Note 2)

88

ºC/W

Notes: (1) Pulse test width pw=300usec, 1% duty cycle.

(2) Mounted on P.C. board with 0.2*0.2”(5.0*5.0mm) copper pad areas.

Halogen Free

- Plastic package has UL 94V-0.

- Case: Packed with FRP substrate and

epoxy underfilled.

- Terminals: Pure Tin plated (Lead-Free),solderable

per MIL-STD-750, method 2026.

Dimensions in inches and (millimeter)

1206

0.063(1.60)

Typ.

R 0.016(0.40)

0.083(2.10)

0.142(3.60)

0.126(3.20)

0.046(1.16)

0.034(0.86)

0.035(0.90)

0.020(0.50)

0.035(0.90)

0.020(0.50)

0.067(1.70)

Company reserves the right to improve product design , functions and reliability without notice.

Circuit diagram

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CDBN120-HF

CDBN140-HF

/

SMD Schottky Barrier Rectifiers