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CSD17313Q2T датащи(PDF) 6 Page - Texas Instruments

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номер детали CSD17313Q2T
подробное описание детали  N-Channel NexFET Power MOSFET
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD17313Q2T датащи(HTML) 6 Page - Texas Instruments

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TC - Case Temperature (°C)
-50
-25
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
D012
VDS - Drain-to-Source Voltage (V)
0.1
1
10
100
0.1
1
10
100
1000
D010
DC
10 ms
1 ms
100 µs
10 µs
TAV - Time in Avalanche (ms)
0.01
0.1
1
1
10
100
D011
TC = 25qC
TC = 125qC
TC - Case Temperature (°C)
-75
-50
-25
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
1.8
D008
VGS = 4.5 V
VGS = 8 V
VSD - Source-to-Drain Voltage (V)
0
0.2
0.4
0.6
0.8
1
0.0001
0.001
0.01
0.1
1
10
D009
TC = 25°C
TC = 125°C
CSD17313Q2
SLPS260E – MARCH 2010 – REVISED SEPTEMBER 2015
www.ti.com
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise noted)
ID = 4 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Single Pulse, Max RθJC = 7.4°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature
6
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