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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD16401Q5T датащи(PDF) 3 Page - Texas Instruments |
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CSD16401Q5T датащи(HTML) 3 Page - Texas Instruments |
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3 / 13 page  CSD16401Q5 www.ti.com SLPS200B – AUGUST 2009 – REVISED SEPTEMBER 2015 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 25 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 20 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –12 V to 16 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.2 1.5 1.9 V VGS = 4.5 V, ID = 40 A 1.8 2.3 m Ω RDS(on) Drain-to-Source On Resistance VGS = 10 V, ID = 40 A 1.3 1.6 m Ω gfs Transconductance VDS = 15 V, ID = 40 A 168 S DYNAMIC CHARACTERISTICS CISS Input Capacitance 3150 4100 pF COSS Output Capacitance VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz 2530 3300 pF CRSS Reverse Transfer Capacitance 175 230 pF Rg Series Gate Resistance 1.2 2.4 Ω Qg Gate Charge Total (4.5 V) 21 29 nC Qgd Gate Charge, Gate-to-Drain 5.2 nC VDS = 12.5 V, ID = 40 A Qgs Gate Charge, Gate-to-Source 8.3 nC Qg(th) Gate Charge at Vth 4.8 nC QOSS Output Charge VDS = 15 V, VGS = 0 V 55 nC td(on) Turnon Delay Time 16.6 ns tr Rise Time 30 ns VDS = 12.5 V, VGS = 4.5 V, ID = 40 A RG = 2 Ω td(off) Turn Off Delay Time 20 ns tf Fall Time 12.7 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage IS = 40 A, VGS = 0 V 0.85 1 V Qrr Reverse Recovery Charge VDD = 15 V, IF = 40 A, di/dt = 300 A/μs 72 nC trr Reverse Recovery Time VDD = 15 V, IF = 40 A, di/dt = 300 A/μs 45 ns 5.2 Thermal Information TA = 25°C (unless otherwise noted) THERMAL METRIC MIN TYP MAX UNIT RθJC Thermal resistance, junction-to-case(1) 0.8 °C/W RθJA Thermal resistance, junction-to-ambient(1) (2) 50 °C/W (1) RθJC is determined with the device mounted on a 1 inch (2.54 cm) square, 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm × 3.81 cm), 0.060 inch (1.52 mm) thick FR4 board. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1 inch2 (6.45 cm2) of 2 oz. (0.071 mm thick) Cu. Copyright © 2009–2015, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD16401Q5 |
Аналогичный номер детали - CSD16401Q5T |
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Аналогичное описание - CSD16401Q5T |
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