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LM3533 датащи(PDF) 4 Page - Texas Instruments

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номер детали LM3533
подробное описание детали  Complete Lighting Power Solution for Smartphone Handsets
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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LM3533
SNOSC68C – APRIL 2012 – REVISED SEPTEMBER 2015
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2) (3)
MIN
MAX
UNIT
VIN to GND
−0.3
6
V
VSW, VOVP, VHVLED1, VHVLED2 to GND
−0.3
45
V
VSCL, VSDA, VALS, VPWM to GND
−0.3
6
V
VINT, VHWEN, VCPOUT to GND
−0.3
6
V
VLVLED1- VLVLED5, to GND
−0.3
6
V
Continuous power dissipation
Internally limited
Junction temperature, TJ-MAX
150
°C
Maximum lead temperature (soldering)
See(4)
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages are with respect to the potential at the GND pin.
(3)
If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications.
(4)
For detailed soldering specifications and information, refer to Texas Instruments Application Note 1112: DSBGA Wafer Level Chip Scale
Package (SNVA009) available at www.ti.com.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
NOM
MAX
UNIT
VIN to GND
2.7
5.5
V
VSW, VOVP, VHVLED1, VVHLED2 to GND
0
40
V
VLVLED1- VLVLED5 to GND
0
6
V
Junction temperature (TJ)
(2) (3)
−40
125
°C
(1)
All voltages are with respect to the potential at the GND pin.
(2)
Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 140°C (typical) and
disengages at TJ= 125°C (typical).
(3)
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP =
125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the
part/package in the application (RθJA), as given by the equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).
6.4 Thermal Information
LM3533
THERMAL METRIC(1)
YFQ (DSBGA)
UNIT
20 PINS
RθJA
Junction-to-ambient thermal resistance(2)
55.3
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2)
Junction-to-ambient thermal resistance (RJθA) is taken from a thermal modeling result, performed under the conditions and guidelines
set forth in the JEDEC standard JESD51-7. The test board is a 4-layer FR-4 board measuring 102 mm × 76 mm × 1.6 mm with a 2 × 1
array of thermal vias. The ground plane on the board is 50 mm × 50 mm. Thickness of copper layers are 36 µm/18 µm/18 µm/36 µm
(1.5 oz/1 oz/1 oz/1.5 oz). Ambient temperature in simulation is 22°C in still air. Power dissipation is 1 W. The value of RθJA of this
product in the DSBGA package could fall in a range as wide as 60°C/W to 110°C/W (if not wider), depending on PCB material, layout,
and environmental conditions. In applications where high maximum power dissipation exists special care must be paid to thermal
dissipation issues.
4
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