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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TS3A227EYFFR датащи(PDF) 6 Page - Texas Instruments |
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TS3A227EYFFR датащи(HTML) 6 Page - Texas Instruments |
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6 / 59 page  TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 7.5 Electrical Characteristics Unless otherwise noted the specification applies over the VDD and ambient operating temperature range. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE VDD Supply voltage 2.5 3.3 4.5 V No accessory inserted. I2C bus inactive(1) 0.5 10 µA VDD = 2.5 V to 4.5 V Manual switch control = ’1’ , I2C bus inactive,(1) 7 15 µA VDD = 2.5 V to 4.5 V, Depletion FETs on Manual switch control = ’1’ , I2C bus inactive, 20 40 µA VDD = 2.5 V to 4.5 V Depletion FETs off 3-pole accessory inserted. 11 20 µA I2C bus inactive(1), FM Support = ’0’ IDD Quiescent current VDD = 2.5 V to 4.5 V 3-pole accessory inserted. 25 45 µA I2C bus inactive,(1) FM Support = ’1’ VDD = 2.5 V to 4.5 V 4-pole Accessory inserted. 25 40 µA I2C bus inactive,(1) VDD = 2.5 V to 4.5 V 4-pole Accessory inserted. KP detection enabled 30 45 µA I2C bus inactive,(1) VDD = 2.5 V to 4.5 V No accessory inserted. Quiescent current addition from using a IDD_1.8 1 8 µA I2C bus inactive at 1.8 V,(3) 1.8 V I2C bus.(2) VDD = 2.5 V to 4.5 V SWITCH RESISTANCE RING2 GNDFET on resistance (DSBGA 40 85 Package) RR2GNDFT RING2 GNDFET on resistance (QFN 60 95 Package) VDD = 3.3 V, VGND = 0V, m Ω IGNDA = 75 mA SLEEVE GNDFET on resistance (DSBGA 40 85 Package) RSLVGNDFT SLEEVE GNDFET on resistance (QFN 60 95 Package) RS3PS S3PS on resistance VDD = 3.3 V, 3 6.5 VSLEEVE_SENSE/RING2_SENSE = 0 V to 2.7 V, Ω RS3PR S3PR on resistance 3 6.5 IMICP = ±10 mA RS3GS S3GS on resistance VDD = 3.3 V, 0.5 1 VSLEEVE_SENSE/RING2_SENSE = 0 V to 2.7 V, Ω RS3GR S3GR on resistance 0.5 1 IGND_SENSE = ±75 mA RS1 Switch 1 on resistance 15 30 Ω RS2 Switch 2 on resistance 15 30 VDD = 3.3 V, IGND = 10 mA RR2DFET RING2 depletion FET on resistance 75 150 Ω RSLVDFET SLEEVE depletion FET on resistance 75 150 SWITCH LEAKAGE CURRENT RING2 pin off leakage 1 SLEEVE pin off leakage 1 RING2_SENSE pin off leakage 1 IOFF VIN = 0 V to 3.3 V, VDD = 3.3 V µA SLEEVE_SENSE pin off leakage 1 MICP pin off leakage 1 GND_SENSE pin off leakage 1 ION S2PS, S3PR, S3GS, S3GR on leakage VSLEEVE/RING2 = 0V, VDD = 3.3 V 1 µA (1) The I2C bus is inactive if both the SDA and SCL lines are tied to VDD. (2) If the I2C bus is operating at 1.8 V the IDD_1.8 current number will be in addition to the other current consumption numbers specified. (3) The I2C bus is inactive if both the SDA and SCL lines are tied to 1.8 V. 6 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E |
Аналогичный номер детали - TS3A227EYFFR |
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Аналогичное описание - TS3A227EYFFR |
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