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ST2N5401 датащи(PDF) 1 Page - Nanjing International Group Co |
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ST2N5401 датащи(HTML) 1 Page - Nanjing International Group Co |
1 / 3 page 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Emitter Voltage ST 2N5400 ST 2N5401 -VCEO -VCEO 120 150 V V Collector Base Voltage ST 2N5400 ST 2N5401 -VCBO -VCBO 130 160 V V Emitter Base Voltage -VEBO 5 V Collector Current -IC 600 mA Power Dissipation Ptot 625 1) mW Junction Temperature Tj 150 oC Storage Temperature Range TS -55 to +150 oC 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. |
Аналогичный номер детали - ST2N5401 |
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Аналогичное описание - ST2N5401 |
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