BC546B datasheet(2/2 Pages) DIOTEC

номер детали	BC546B

подробное описание детали	Si-Epitaxial PlanarTransistors

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1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

7

01.11.2003

General Purpose Transistors

BC 546 ... BC 549

Characteristics, T

j = 25

/C

Kennwerte, T

j = 25

/C

Min.

Typ.

Max.

Collector saturation voltage – Kollektor-Sättigungsspannung

I

C = 10 mA, IB = 0.5 mA

V

CEsat

–

80 mV

200 mV

I

C = 100 mA, IB = 5 mA

V

CEsat

–

200 mV

600 mV

Base saturation voltage – Basis-Sättigungsspannung

I

C = 10 mA, IB = 0.5 mA

V

BEsat

–

700 mV

–

I

C = 100 mA, IB = 5 mA

V

BEsat

–

900 mV

–

Base-Emitter voltage – Basis-Emitter-Spannung

V

CE = 5 V, IC = 2 mA

V

BE

580 mV

660 mV

700 mV

V

CE = 5 V, IC = 10 mA

V

BE

–

720 mV

Collector-Emitter cutoff current – Kollektorreststrom

V

CE = 80 V

BC 546

I

CES

–

0.2 nA

15 nA

V

CE = 50 V

BC 547

I

CES

–

0.2 nA

15 nA

V

CE = 30 V

BC 548

I

CES

–

0.2 nA

15 nA

V

CE = 30 V

BC 549

I

CES

–

0.2 nA

15 nA

Collector-Emitter cutoff current – Kollektorreststrom

V

CE = 80 V, Tj = 125

/C

BC 546

I

CES

––

4

:A

V

CE = 50 V, Tj = 125

/C

BC 547

I

CES

––

4

:A

V

CE = 30 V, Tj = 125

/C

BC 548

I

CES

––

4

:A

V

CE = 30 V, Tj = 125

/C

BC 549

I

CES

––

4

:A

Gain-Bandwidth Product – Transitfrequenz

V

CE = 5 V, IC = 10 mA, f = 100 MHz

f

T

–

300 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

V

CB = 10 V, f = 1 MHz

C

CB0

–

3.5 pF

6 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

V

EB = 0.5 V, f = 1 MHz

C

EB0

–

9 pF

–

Noise figure – Rauschmaß

V

CE = 5 V, IC = 200

:A

BC 547

F

–

2 dB

10 dB

R

G = 2 k

S f = 1 kHz,

BC 548

F

–

1.2 dB

4 dB

) f = 200 Hz

BC 549

F

–

1.2 dB

4 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

R

thA

250 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC 556 ... BC 559

Available current gain groups per type

Lieferbare Stromverstärkungsgruppen pro Typ

BC 546A

BC 547A

BC 548A

BC 546B

BC 547B

BC 548B

BC 549B

BC 547C

BC 548C

BC 549C

Аналогичный номер детали - BC546B

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	BC546B	193Kb / 6P	Amplifier Transistors
NXP Semiconductors	BC546B	404Kb / 14P	65 V, 100 mA NPN general-purpose transistors Rev. 07-17 November 2009
Taiwan Semiconductor Co...	BC546B	253Kb / 5P	NPN Transistor
ON Semiconductor	BC546B	140Kb / 6P	Amplifier Transistors(NPN Silicon) 1996 REV 1
Micro Commercial Compon...	BC546B	228Kb / 5P	NPN Silicon Amplifier Transistor 625mW

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Аналогичное описание - BC546B

производитель	номер детали	датащи	подробное описание детали
Diotec Semiconductor	BC556	144Kb / 2P	Si-Epitaxial PlanarTransistors
	2N3903	98Kb / 2P	Si-Epitaxial PlanarTransistors
	TIP125A	49Kb / 2P	Si-Epitaxial PlanarTransistors
	2N4402	97Kb / 2P	Si-Epitaxial PlanarTransistors
	BC327	143Kb / 2P	Si-Epitaxial PlanarTransistors
	BC337	140Kb / 2P	Si-Epitaxial PlanarTransistors
	TIP120A	49Kb / 2P	Si-Epitaxial PlanarTransistors
	2N3905	99Kb / 2P	Si-Epitaxial PlanarTransistors
	TIP31	36Kb / 2P	Si-Epitaxial PlanarTransistors
	TIP32	36Kb / 2P	Si-Epitaxial PlanarTransistors

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