PZTA44/45

NPN SILICON TRANSISTOR

2 of 4

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

PZTA44

500

V

PZTA45

400

V

Collector-Emitter Voltage

PZTA44

400

V

PZTA45

350

V

Emitter-Base Voltage

6

V

Collector Current

300

mA

Collector Dissipation

1.2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown

Voltage

PZTA44

500

V

PZTA45

400

V

Collector-Emitter Breakdown

Voltage

PZTA44

400

V

PZTA45

350

V

Emitter-Base Breakdown Voltage

6

V

Collector Cut-OFF Current

PZTA44

0.1

μA

PZTA45

0.1

μA

Collector Cut-OFF Current

PZTA44

0.5

μA

PZTA45

0.5

μA

Emitter Cut-OFF Current

0.1

μA

DC Current Gain (Note)

40

50

240

45

40

Collector-Emitter Saturation Voltage

0.4

V

0.5

V

0.75

V

Base-Emitter Saturation Voltage

0.75

V

Current Gain Bandwidth Product

50

MHz

Output Capacitance

7

pF

Note: Pulse test: Pulse Width<300

μs, Duty Cycle<2%

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