поискавой системы для электроныых деталей |
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2SK3390 датащи(PDF) 2 Page - Hitachi Semiconductor |
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2SK3390 датащи(HTML) 2 Page - Hitachi Semiconductor |
2 / 7 page 2SK3390 Rev.0, Aug. 2001, page 2 of 7 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 17 V Gate to source voltage V GSS ±10 V Drain current I D 1A Drain peak current I D(pulse) Note1 2.5 A Channel dissipation Pch Note2 20 W Channel temperature Tch 150 °C Storage temperature Tstg –45 to +150 °C Note: 1. PW < 1sec, Tch < 150 °C 2. Value at Tc = 25°C Electrical Characteristics (Tc = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage drain current I DSS —— 10 µAV DS = 13.7 V, VGS = 0 Gate to source leak current I GSS —— ±5 µAV GS = ±10V, VDS = 0 Gate to source cutoff voltage V GS(off) 2.2 — 3.0 V I D = 1mA, VDS = 13.7V Input capacitance Ciss — 27.5 — pF V GS = 5V, VDS = 0, f = 1MHz Output capacitance Coss — 10.5 — pF V DS = 13.7V, VGS = 0, f = 1MHz Output Power Pout 6.31 — — W V DS = 13.7V, IDO = 0.25A f = 836 MHz, Pin = 126 mW Added Efficiency ηadd 60 — — % V DS = 13.7V, IDO = 0.25A f = 836 MHz, Pin = 126 mW |
Аналогичный номер детали - 2SK3390 |
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Аналогичное описание - 2SK3390 |
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