Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4522AX

Fig.7. High and low DC current gain.

Fig.8. High and low DC current gain.

Fig.9. Typical collector-emitter saturation voltage.

Fig.10. Typical base-emitter saturation voltage.

Fig.11. Typical collector storage and fall time.

I

Fig.12. Typical collector storage and fall time.

I

0.01

0.1

1

10

100

1

10

100

IC / A

hFE

Ths = 25 C

Ths = 85 C

VCE = 1 V

BU4522AF/X

01

234

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

IB / A

VBEsat \ V

Ths = 25 C

Ths = 85 C

IC = 7 A

IC = 6 A

0.01

0.1

1

10

100

1

10

100

IC / A

Ths = 25 C

Ths = 85 C

VCE = 5 V

BU4522AF/X

0.5

1

1.5

2

1

2

3

4

5

IBend / A

ts/tf/ us

BU4522AF/X 16kHz

ICsat = 7 A

Ths = 85 C

Freq = 16 kHz

0

0

0.1

1

10

100

0.01

0.1

1

10

IC / A

VCEsat (V)

BU4522AF/X

Ths = 25 C

Ths = 85 C

IC/IB = 5

0

0.5

1

1.5

2

0

1

2

3

4

5

IB / A

ts/tf/ us

BU4522AF/X 64kHz

ICsat = 6 A

Ths = 85 C

Freq = 64 kHz

December 1997

4

Rev 1.000