2SK807 datasheet(2/2 Pages) ISC

номер детали	2SK807

подробное описание детали	Fast Switching Speed

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

isc N-Channel Mosfet Transistor

2SK807

·ELECTRICAL CHARACTERISTICS (T

C=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID= 10mA

600

V

VGS(th)

Gate Threshold Voltage

VDS=25 VGS; ID=1mA

1.0

5.0

V

RDS(on)

Drain-Source On-stage Resistance

VGS=10V; ID= 3A

1.1

1.7

Ω

IGSS

Gate Source Leakage Current

VGS= ±20V;VDS= 0

±1

uA

IDSS

Zero Gate Voltage Drain Current

VDS=480V; VGS= 0

0.1

mA

ton

Turn-on time

VGS=10V;ID=3A;

RL=50Ω

35

ns

toff

Turn-off time

160

ns

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производитель	номер детали	датащи	подробное описание детали
NEC	2SK800	150Kb / 3P	N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR
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Surge Components	1N3004W	393Kb / 3P	fast switching speed
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