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FM25V02A-G датащи(PDF) 1 Page - Cypress Semiconductor

номер детали FM25V02A-G
подробное описание детали  256-Kbit (32K 횞 8) Serial (SPI) F-RAM
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производитель  CYPRESS [Cypress Semiconductor]
домашняя страница  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25V02A-G датащи(HTML) 1 Page - Cypress Semiconductor

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FM25V02A
256-Kbit (32K × 8) Serial (SPI) F-RAM
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document Number: 001-90865 Rev. *F
Revised January 14, 2016
256-Kbit (32K × 8) Serial (SPI) F-RAM
Features
256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32K × 8
High-endurance 100 trillion (10
14) read/writes
151-year data retention (See the Data Retention and
Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write-protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
2.5-mA active current at 40 MHz
150-A standby current
8-A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 C to +85 C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no-leads (DFN) package
Restriction of hazardous substances (RoHS) compliant
Functional Description
The FM25V02A is a 256-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by serial
flash, EEPROM, and other nonvolatile memories.
Unlike serial flash and EEPROM, the FM25V02A performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25V02A is capable of supporting
1014 read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the FM25V02A ideal for nonvolatile
memory
applications
requiring
frequent
or
rapid
writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25V02A provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25V02A uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
industrial range of –40
C to +85 C.
For a complete list of related resources, click here.
Logic Block Diagram
Instruction Decoder
Clock Generator
Control Logic
Write Protect
Instruction Register
Address Register
Counter
32 K x 8
F-RAM Array
15
Data I/O Register
8
Nonvolatile Status
Register
3
WP
CS
HOLD
SCK
SO
SI


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