2SK3107C datasheet(3/8 Pages) RENESAS

номер детали	2SK3107C

подробное описание детали	N-CHANNEL MOSFET FOR SWITCHING

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2SK3107C

R07DS1286EJ0200 Rev.2.00

Page 3 of 6

Jul 16, 2015

Typical Characteristics (TA = 25

C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

FORWARD BIAS SAFE OPERATING AREA

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

TA – Ambient Temperature -

C

0.01

0.1

1

110

100

ID(pulse)=0.8A

DC

Power Dissipation Limited

ID(DC)=0.2A

1ms

10ms

100ms

TA=25°C

Single Pulse

VDS - Drain to Source Voltage – V

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

02

468

Pulsed

VGS = 10 V

4.5 V

VDS - Drain to Source Voltage - V

0.0001

0.001

0.01

0.1

1

01

23

45

VDS = 5 V

Pulsed

TA = 125

C

75

C

25

C

25C

VGS - Gate to Source Voltage – V

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

1

1.5

2

2.5

3

-50

0

50

100

150

VDS = VGS

ID = 250

 A

Tch - Channel Temperature -

C

0.01

0.1

1

0.01

0.1

1

VDS = 10 V

Pulsed

TA =

25C

25

C

75

C

125

C

ID - Drain Current - A

Аналогичный номер детали - 2SK3107C

производитель	номер детали	датащи	подробное описание детали
NEC	2SK3107	50Kb / 8P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
Renesas Technology Corp	2SK3107	312Kb / 7P	MOS FIELD EFFECT TRANSISTOR 1999

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Аналогичное описание - 2SK3107C

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Renesas Technology Corp	QN7002	172Kb / 8P	N-CHANNEL MOSFET FOR SWITCHING
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	UPA572CT	143Kb / 8P	N-CHANNEL MOSFET FOR SWITCHING
	UPA606CT	175Kb / 8P	N-CHANNEL MOSFET FOR SWITCHING

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2SK3107C датащи(PDF) 3 Page - Renesas Technology Corp

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