CSD18531Q5AT datasheet(6/13 Pages) TI1

номер детали	CSD18531Q5AT

подробное описание детали	60V N-Channel NexFET Power MOSFET

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TC - Case Temperature (°C)

-50

-25

0

25

50

75

100

125

150

175

0

20

40

60

80

100

120

D012

VDS - Drain-to-Source Voltage (V)

0.1

1

10

100

0.1

1

10

100

1000

D010

DC

10 ms

1 ms

100 µs

10 µs

TAV - Time in Avalanche (ms)

0.01

0.1

1

10

100

D011

TC = 25G C

TC = 125G C

VSD - Source-to-Drain Voltage (V)

0

0.2

0.4

0.6

0.8

1

0.0001

0.001

0.01

0.1

1

10

100

D009

TC = 25°C

TC = 125°C

TC - Case Temperature (°C)

-75

-50

-25

0

25

50

75

100

125

150

175

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

D008

VGS = 4.5 V

VGS = 10 V

CSD18531Q5A

SLPS321E – JUNE 2012 – REVISED AUGUST 2015

www.ti.com

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

ID = 22 A

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

Single Pulse RθJC = 1.0°C/W

Figure 10. Maximum Safe Operating Area

Figure 11. Single Pulse Unclamped Inductive Switching

Figure 12. Maximum Drain Current vs Temperature

6

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