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LM2700Q-Q1 датащи(PDF) 3 Page - Texas Instruments

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номер детали LM2700Q-Q1
подробное описание детали  600kHz/1.25MHz, 2.5A, Step-up PWM DC/DC Converter
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LM2700Q
www.ti.com
SNVS794A – MARCH 2012 – REVISED MARCH 2013
Block Diagram
Detailed Description
The LM2700Q utilizes a PWM control scheme to regulate the output voltage over all load conditions. The
operation can best be understood referring to the block diagram and Figure 16 of the Operation section. At the
start of each cycle, the oscillator sets the driver logic and turns on the NMOS power device conducting current
through the inductor, cycle 1 of Figure 16 (a). During this cycle, the voltage at the VC pin controls the peak
inductor current. The VC voltage will increase with larger loads and decrease with smaller. This voltage is
compared with the summation of the SW voltage and the ramp compensation. The ramp compensation is used in
PWM architectures to eliminate the sub-harmonic oscillations that occur during duty cycles greater than 50%.
Once the summation of the ramp compensation and switch voltage equals the VC voltage, the PWM comparator
resets the driver logic turning off the NMOS power device. The inductor current then flows through the schottky
diode to the load and output capacitor, cycle 2 of Figure 16 (b). The NMOS power device is then set by the
oscillator at the end of the period and current flows through the inductor once again.
The LM2700Q has dedicated protection circuitry running during normal operation to protect the IC. The Thermal
Shutdown circuitry turns off the NMOS power device when the die temperature reaches excessive levels. The
UVP comparator protects the NMOS power device during supply power startup and shutdown to prevent
operation at voltages less than the minimum input voltage. The OVP comparator is used to prevent the output
voltage from rising at no loads allowing full PWM operation over all load conditions. The LM2700Q also features
a shutdown mode decreasing the supply current to 5µA.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2012–2013, Texas Instruments Incorporated
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