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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LM3450 датащи(PDF) 5 Page - Texas Instruments |
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LM3450 датащи(HTML) 5 Page - Texas Instruments |
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5 / 40 page  LM3450 www.ti.com SNVS681D – NOVEMBER 2010 – REVISED MAY 2013 ELECTRICAL CHARACTERISTICS (1) (continued) Unless otherwise specified VCC = 14V. Specifications in standard type face are for TJ = 25°C and those with boldface type apply over the full Operating Temperature Range ( TJ = −40°C to +125°C). Typical values represent the most likely parametric norm at TA = TJ = +25°C, and are provided for reference purposes only. Symbol Parameter Conditions Min(2) Typ(3) Max(2) Units PWM Comparator Input Bias Current 20 nA VLIM CS Current Limit Threshold 1.40 1.50 1.60 V CS Delay to Output 100 ns CS Blanking Sinking Impedance 1 k Ω tLEB Leading Edge Blanking (LEB) Time 140 ns ANALOG ADJUST INPUT (VADJ) VADJ-LP VADJ Low Threshold (Low Power Mode) VADJ Falling 56 75 mV VADJ Low Hysteresis 50 VADJ Pull-up Current Source 1 µA VADJ Open Voltage VADJ Open 3 V DYNAMIC HOLD CIRCUIT (HOLD, ISEN) RDSON-HD HOLD MosFET On-Resistance ISEN Short to GND 22 30 42 Ω VSEN-REF ISEN Reference Voltage 162 200 232 mV ISEN Bias Current 5 µA PRE-REGULATOR GATE DRIVE OUTPUT (BIAS) VBIAS BIAS High Voltage @ 100µA VCC < VCC-FALL 18.8 21 22.6 V BIAS Low Voltage @ 100µA VCC > VCC-RISE 13.5 14 14.5 GATE DRIVER OUTPUT (GATE) VGATE-H GATE Voltage High IGATE = 20mA 11.5 V IGATE = 200mA 10.5 GATE Pull Down Resistance 2 8 Ω GATE Peak Current (4)±1.5 A REFERENCE VOLTAGE OUTPUT (VREF) VREF Reference Voltage No Load 2.85 3 3.15 V Current Limit 1.5 2.0 3.0 mA DIMMING OUTPUT (DIM, FLT1, FLT2) FLT1 Output Impedance Standby Mode 500 k Ω Transition mode 1.6 Triangle Waveform Compared to FLT2 High 1.49 V Low 15 mV fDIM DIM Frequency 180 460 700 Hz OFF-TIMERS tOFF-MAX Maximum Off-Time (Normal Operation) 340 µs tOFF-LP Off-Time (Low Power Mode) 42 THERMAL SHUTDOWN Thermal Limit Threshold (4) 160 °C Thermal Limit Hysteresis 20 THERMAL RESISTANCE θJA Junction to Ambient TSSOP-16(4)(5) 38.0 °C/W θJC Junction to Case 10.0 (4) These electrical parameters are specified by design, and are not verified by test. (5) Junction-to-ambient thermal resistance is highly board-layout dependent. In applications where high maximum power dissipation exists, namely driving a large MOSFET at high switching frequency from a high input voltage, special care must be paid to thermal dissipation issues during board design. In high-power dissipation applications, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125°C for Q1, or 150°C for Q0), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the package in the application ( θJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX). Copyright © 2010–2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LM3450 |
Аналогичный номер детали - LM3450 |
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Аналогичное описание - LM3450 |
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