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IXYH40N90C3D1 датащи(PDF) 2 Page - IXYS Corporation |
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IXYH40N90C3D1 датащи(HTML) 2 Page - IXYS Corporation |
2 / 7 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYH40N90C3D1 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 e ∅ P TO-247 (IXYH) Outline 1 2 3 Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Reverse Diode (FRED) (T J = 25°C, Unless Otherwise Specified) Characteristic Value Symbol Test Conditions Min. Typ. Max. V F 2.8 V T J = 150°C 1.6 V I RM 4 A t rr 100 ns R thJC 0.9 °C/W I F = 30A,VGE = 0V, -diF/dt = 100A/μs, T J = 100°C V R = 300V T J = 100°C I F = 30A,VGE = 0V, Note 1 Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g fs I C = 40A, VCE = 10V, Note 1 14 24 S C ies 2170 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 160 pF C res 40 pF Q g(on) 74 nC Q ge I C = 40A, VGE = 15V, VCE = 0.5 • VCES 18 nC Q gc 34 nC t d(on) 27 ns t ri 54 ns E on 1.9 mJ t d(off) 78 ns t fi 110 ns E off 1.0 1.7 mJ t d(on) 27 ns t ri 54 ns E on 2.7 mJ t d(off) 87 ns t fi 150 ns E off 1.2 mJ R thJC 0.25 °C/W R thCS 0.21 °C/W Inductive load, T J = 25°C I C = 40A, VGE = 15V V CE = 0.5 • VCES, RG = 5Ω Note 2 Inductive load, T J = 125°C I C = 40A, VGE = 15V V CE = 0.5 • VCES, RG = 5Ω Note 2 PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. |
Аналогичный номер детали - IXYH40N90C3D1 |
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Аналогичное описание - IXYH40N90C3D1 |
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