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IXYH40N90C3D1 датащи(PDF) 2 Page - IXYS Corporation

номер детали IXYH40N90C3D1
подробное описание детали  Preliminary Technical Information
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYH40N90C3D1 датащи(HTML) 2 Page - IXYS Corporation

  IXYH40N90C3D1 Datasheet HTML 1Page - IXYS Corporation IXYH40N90C3D1 Datasheet HTML 2Page - IXYS Corporation IXYH40N90C3D1 Datasheet HTML 3Page - IXYS Corporation IXYH40N90C3D1 Datasheet HTML 4Page - IXYS Corporation IXYH40N90C3D1 Datasheet HTML 5Page - IXYS Corporation IXYH40N90C3D1 Datasheet HTML 6Page - IXYS Corporation IXYH40N90C3D1 Datasheet HTML 7Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N90C3D1
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
e
∅ P
TO-247 (IXYH) Outline
1
2
3
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Notes:
1. Pulse test, t
≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE(clamp), TJ or RG.
Reverse Diode (FRED)
(T
J = 25°C, Unless Otherwise Specified)
Characteristic Value
Symbol
Test Conditions
Min.
Typ.
Max.
V
F
2.8
V
T
J = 150°C
1.6
V
I
RM
4
A
t
rr
100
ns
R
thJC
0.9 °C/W
I
F = 30A,VGE = 0V, -diF/dt = 100A/μs,
T
J = 100°C
V
R = 300V
T
J = 100°C
I
F = 30A,VGE = 0V, Note 1
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C = 40A, VCE = 10V, Note 1
14
24
S
C
ies
2170
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
160
pF
C
res
40
pF
Q
g(on)
74
nC
Q
ge
I
C = 40A, VGE = 15V, VCE = 0.5 • VCES
18
nC
Q
gc
34
nC
t
d(on)
27
ns
t
ri
54
ns
E
on
1.9
mJ
t
d(off)
78
ns
t
fi
110
ns
E
off
1.0
1.7
mJ
t
d(on)
27
ns
t
ri
54
ns
E
on
2.7
mJ
t
d(off)
87
ns
t
fi
150
ns
E
off
1.2
mJ
R
thJC
0.25 °C/W
R
thCS
0.21
°C/W
Inductive load, T
J = 25°C
I
C = 40A, VGE = 15V
V
CE = 0.5 • VCES, RG = 5Ω
Note 2
Inductive load, T
J = 125°C
I
C = 40A, VGE = 15V
V
CE = 0.5 • VCES, RG = 5Ω
Note 2
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.


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