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74LVC1G3157DCKRE4 датащи(PDF) 5 Page - Texas Instruments |
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74LVC1G3157DCKRE4 датащи(HTML) 5 Page - Texas Instruments |
5 / 35 page 5 SN74LVC1G3157 www.ti.com SCES424J – JANUARY 2003 – REVISED JUNE 2016 Product Folder Links: SN74LVC1G3157 Submit Documentation Feedback Copyright © 2003–2016, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) SN74LVC1G3157 UNIT DBV (SOT-23) DCK (SC70) DRL (SOT) DRY (SON) YZP (DSBGA) 6 PINS 6 PINS 6 PINS 6 PINS 6 PINS RθJA Junction-to-ambient thermal resistance 165 259 142 234 123 °C/W (1) TA = 25°C (2) Measured by the voltage drop between I/O pins at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages on the two (A or B) ports. (3) Specified by design (4) Δron = ron(max) – ron(min) measured at identical VCC, temperature, and voltage levels (5) This parameter is characterized, but not production tested. (6) Flatness is defined as the difference between the maximum and minimum values of on-state resistance over the specified range of conditions. (7) Ioff is the same as IS(off) (off-state switch leakage current). 6.5 Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS VCC MIN TYP(1) MAX UNIT ron ON-state switch resistance(2) See Figure 1 and Figure 2 VI = 0 V IO = 4 mA 1.65 V 11 20 Ω VI = 1.65 V IO = –4 mA 15 50 VI = 0 V IO = 8 mA 2.3 V 8 12 VI = 2.3 V IO = –8 mA 11 30 VI = 0 V IO = 24 mA 3 V 7 9 VI = 3 V IO = –24 mA 9 20 VI = 0 V IO = 30 mA 4.5 V 6 7 VI = 2.4 V IO = –30 mA 7 12 VI = 4.5 V IO = –30 mA 7 15 rrange ON-state switch resistance over signal range(2)(3) 0 ≤ VBn ≤ VCC (see Figure 1 and Figure 2) IA = –4 mA 1.65 V 140 Ω IA = –8 mA 2.3 V 45 IA = –24 mA 3 V 18 IA = –30 mA 4.5 V 10 Δron Difference of ON-state resistance between switches(2)(4)(5) See Figure 2 VBn = 1.15 V IA = –4 mA 1.65 V 0.5 Ω VBn = 1.6 V IA = –8 mA 2.3 V 0.1 VBn = 2.1 V IA = –24 mA 3 V 0.1 VBn = 3.15 V IA = –30 mA 4.5 V 0.1 ron(flat) ON resistance flatness(2)(4)(6) 0 ≤ VBn ≤ VCC IA = –4 mA 1.65 V 110 Ω IA = –8 mA 2.3 V 26 IA = –24 mA 3 V 9 IA = –30 mA 4.5 V 4 Ioff (7) OFF-state switch leakage current 0 ≤ VI, VO ≤ VCC (see Figure 3 ) 1.65 V to 5.5 V ±1 µA ±0.05 ±0.1(1) IS(on) ON-state switch leakage current VI = VCC or GND, VO = Open (see Figure 4) 5.5 V ±1 µA ±0.1(1) IIN Control input current 0 ≤ VIN ≤ VCC 0 V to 5.5 V ±1 µA ±0.05 ±0.1(1) ICC Supply current S = VCC or GND 5.5 V 1 10 µA ΔICC Supply-current change S = VCC – 0.6 V 5.5 V 500 µA Ci Control input capacitance S 5 V 2.7 pF |
Аналогичный номер детали - 74LVC1G3157DCKRE4 |
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Аналогичное описание - 74LVC1G3157DCKRE4 |
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