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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LS5911 датащи(PDF) 1 Page - Linear Integrated Systems |
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LS5911 датащи(HTML) 1 Page - Linear Integrated Systems |
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1 / 2 page  FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE (10kHz) en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS ABSOLUTE MAXIMUM RATINGS 1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation (Total) 500mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -25V Gate to Source -25V MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS5911 LS5912 LS5912C SYMBOL CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS GS2 GS1 V V − Differential Gate to Source Cutoff Voltage 10 15 40 mV VDG = 10V, ID = 5mA ∆T V V ∆ GS2 GS1 − Differential Gate to Source Cutoff Voltage Change with Temperature 20 40 40 µV/°C VDG = 10V, ID = 5mA TA = -55 to +125°C DSS2 DSS1 I I Gate to Source Saturation Current Ratio 0.95 1 0.95 1 0.95 1 % VDS = 10V, VGS = 0V G2 G1 I I − Differential Gate Current 20 20 20 nA VDG = 10V, ID = 5mA TA = +125°C fs2 fs1 g g Forward Transconductance Ratio 2 0.95 1 0.95 1 0.95 1 % VDS = 10V, ID = 5mA f = 1kHz CMRR Common Mode Rejection Ratio 85 dB VDG = 5V to 10V ID = 5mA 1 2 3 4 8 7 6 5 PDIP-B S1 D1 G1 NC NC G2 D2 S2 1 2 3 4 8 7 6 5 SOIC-B S1 D1 G1 NC NC G2 D2 S2 1 2 3 4 8 7 6 5 PDIP-A S1 D1 SS G1 G2 SS D2 S2 1 2 3 4 8 7 6 5 SOIC-A S1 D1 SS G1 G2 SS D2 S2 5 BOTTOM VIEW TO-78 1 2 3 6 7 D1 G1 S1 S2 D2 G2 1 3 2 SOT-23 TOP VIEW 6 4 5 S2 D2 G2 G1 D1 S1 5 BOTTOM VIEW TO-71 1 2 3 6 7 D1 G1 S1 S2 D2 G2 Linear Integrated Systems LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS5911 LS5912 LS5912C SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage -25 -25 -25 IG = -1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage -1 -5 -1 -5 -1 -5 VDS = 10V, ID = 1nA VGS(F) Gate to Source Forward Voltage 0.7 IG = 1mA, VDS = 0V VGS Gate to Source Voltage -0.3 -4 -0.3 -4 -0.3 -4 V VDG = 10V, IG = 5mA IDSS Drain to Source Saturation Current 3 7 40 7 40 7 40 mA VDS = 10V, VGS = 0V IGSS Gate Leakage Current -1 -50 -50 -50 VGS = -15V, VDS = 0V IG Gate Operating Current -1 -50 -50 -50 pA VDG = 10V, ID = 5mA Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 |
Аналогичный номер детали - LS5911 |
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Аналогичное описание - LS5911 |
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