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FDS6993 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6993 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page June 2003 ©2003 Fairchild Semiconductor Corporation FDS6993 Rev C (W) FDS6993 Dual P-Channel PowerTrench ® MOSFET General Description These P-Channel MOSFETs are made using FSC’s PowerTrench ® technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink. The combination of silicon and package technologies results in minimum board space and cost. Features • Q1: P-Channel –4.3A, –30V R DS(on) = 55mΩ @ VGS = –10V R DS(on) = 85mΩ @ VGS = –4.5V • Q2: P-Channel –6.8A, –12V R DS(on) = 17mΩ @ VGS = –4.5V R DS(on) = 24mΩ @ VGS = –2.5V R DS(on) = 30mΩ @ VGS = –1.8V • High power and handling capability in a widely used surface mount package S D S S SO-8 D D D G D1 D1 D2 D2 S1 G1 S2 G2 Pin 1 SO-8 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage –30 –12 V VGSS Gate-Source Voltage ±25 ±8 V ID Drain Current - Continuous (Note 1a) –4.3 –6.8 A - Pulsed –20 –20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6993 FDS6993 13” 12mm 2500 units 4 3 2 1 5 6 7 8 Q2 Q1 |
Аналогичный номер детали - FDS6993 |
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Аналогичное описание - FDS6993 |
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