©2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

FQPF2N70

700V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

Features

• Low gate charge ( typical 9.0 nC)

• Low Crss ( typical 5.0 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Thermal Characteristics

Symbol

Parameter

FQPF2N70

Units

Drain-Source Voltage

700

V

Drain Current

2.0

A

1.3

A

Drain Current

- Pulsed

(Note 1)

8.0

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

140

mJ

Avalanche Current

(Note 1)

2.0

A

Repetitive Avalanche Energy

(Note 1)

2.8

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

28

W

- Derate above 25°C

0.22

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

4.46

°C/W

Thermal Resistance, Junction-to-Ambient

--

62.5

°C/W

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TO-220F

FQPF Series

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