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FDS7764S датащи(PDF) 6 Page - Fairchild Semiconductor |
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FDS7764S датащи(HTML) 6 Page - Fairchild Semiconductor |
6 / 7 page FDS7764S Rev D (W) Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDS7764S. Time: 12.5ns/div Figure 12. FDS7764S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6644). Time: 12.5ns/div Figure 13. Non-SyncFET (FDS6644) body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) T A = 125 oC TA = 25 oC T A = 100 oC Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. |
Аналогичный номер детали - FDS7764S |
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Аналогичное описание - FDS7764S |
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