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BC847BVN датащи(PDF) 4 Page - NXP Semiconductors |
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BC847BVN датащи(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2001 Nov 07 4 Philips Semiconductors Product specification NPN/PNP general purpose transistor BC847BVN handbook, halfpage 0 400 600 200 MLD703 10−1 110 IC (mA) hFE 102 103 (1) (3) (2) Fig.2 DC current gain as a function of collector current: typical values. TR1 (NPN); VCE =5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLD704 10−2 10−1 1 IC (mA) VBE mV 10 102 103 (3) (2) (1) Fig.3 Base-emitter voltage as a function of collector current; typical values. TR1 (NPN); VCE =5V. (1) Tamb = −55 °C. (2) Tamb =25 °C. (3) Tamb = 150 °C. handbook, halfpage 104 103 102 10 MLD705 10−1 110 IC (mA) VCEsat (mV) 102 103 (2) (1) (3) Fig.4 Collector-emitter saturation voltage as a function of collector current: typical values. TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLD706 1 10−1 IC (mA) VBEsat (mV) 10 102 103 (1) (3) (2) Fig.5 Base-emitter saturation voltage as a function of collector current. TR1 (NPN); IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb =25 °C. (3) Tamb = 150 °C. |
Аналогичный номер детали - BC847BVN |
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Аналогичное описание - BC847BVN |
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