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BC847BVN датащи(PDF) 4 Page - NXP Semiconductors

номер детали BC847BVN
подробное описание детали  NPN/PNP general purpose transistor
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC847BVN датащи(HTML) 4 Page - NXP Semiconductors

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2001 Nov 07
4
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
handbook, halfpage
0
400
600
200
MLD703
10−1
110
IC (mA)
hFE
102
103
(1)
(3)
(2)
Fig.2
DC current gain as a function of collector
current: typical values.
TR1 (NPN); VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MLD704
10−2
10−1
1
IC (mA)
VBE
mV
10
102
103
(3)
(2)
(1)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
TR1 (NPN); VCE =5V.
(1) Tamb = −55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MLD705
10−1
110
IC (mA)
VCEsat
(mV)
102
103
(2)
(1)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current: typical values.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MLD706
1
10−1
IC (mA)
VBEsat
(mV)
10
102
103
(1)
(3)
(2)
Fig.5
Base-emitter saturation voltage as a
function of collector current.
TR1 (NPN); IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.


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