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TPIC6B259DWRG4 датащи(PDF) 4 Page - Texas Instruments |
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TPIC6B259DWRG4 датащи(HTML) 4 Page - Texas Instruments |
4 / 19 page TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 – APRIL 1994 – REVISED JULY 1995 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 schematic of inputs and outputs EQUIVALENT OF EACH INPUT TYPICAL OF ALL DRAIN OUTPUTS VCC Input GND GND DRAIN 50 V 20 V 25 V 12 V absolute maximum ratings over the recommended operating case temperature range (unless otherwise noted)† Logic supply voltage, VCC (see Note 1) 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Logic input voltage range, VI – 0.3 V to 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power DMOS drain-to-source voltage, VDS (see Note 2) 50 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous source-to-drain diode anode current 500 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed source-to-drain diode anode current (see Note 3) 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed drain current, each output, all outputs on, ID, TC = 25°C (see Note 3) 500 mA . . . . . . . . . . . . . . . . . . . Continuous drain current, each output, all outputs on, ID, TC = 25°C 150 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak drain current single output, IDM, TC = 25°C (see Note 3) 500 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single-pulse avalanche energy, EAS (see Figure 4) 30 mJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Avalanche current, IAS (see Note 4) 500 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipating Rating Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating virtual junction temperature range, TJ –40 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating case temperature range, TC –40 °C to 125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range – 65 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to GND. 2. Each power DMOS source is internally connected to GND. 3. Pulse duration ≤ 100 µs and duty cycle ≤ 2%. 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 200 mH, IAS = 0.5 A (see Figure 4). DISSIPATION RATING TABLE PACKAGE TC ≤ 25°C POWER RATING DERATING FACTOR ABOVE TC = 25°C TC = 125°C POWER RATING DW 1389 mW 11.1 mW/ °C 278 mW N 1050 mW 10.5 mW/ °C 263 mW |
Аналогичный номер детали - TPIC6B259DWRG4 |
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Аналогичное описание - TPIC6B259DWRG4 |
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