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FDS9933 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS9933 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page January 2004 ©2004 Fairchild Semiconductor International FDS9933 Rev B FDS9933 Dual P-Channel 2.5V Specified PowerTrench ® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Load switch • Motor drive • DC/DC conversion • Power management Features • –5 A, –20 V, R DS(ON) = 55 m Ω @ V GS = –4.5 V RDS(ON) = 90 m Ω @ V GS = –2.5 V • Extended V GSS range ( ±12V) for battery applications • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G D2 D2 D1 D1 S2 G2 S1 G1 Pin 1 SO-8 4 3 2 1 5 6 7 8 Q1 Q2 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –5 A – Pulsed –30 Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 PD (Note 1c) 0.9 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 9933 FDS9933 13’’ 12mm 2500 units |
Аналогичный номер детали - FDS9933 |
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Аналогичное описание - FDS9933 |
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