LC898123F40XC

www.onsemi.com

8

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Applicable Pin

High-level input

voltage

VIH

CMOS

schmitt

1.36

V

SCL2(TXD), SDA2(RXD),

EXCLK

Low-level input

voltage

VIL

0.39

V

High-level input

voltage

VIH

CMOS

schmitt

1.26

V

DGDIN, DGSSB,

DGSCLK, DGDATA

Low-level input

voltage

VIL

0.35

High-level input

voltage

VIH

CMOS

schmitt

1.40

SCL, SDA

Low-level input

voltage

VIL

0.40

V

High-level input

voltage

VIH

CMOS

schmitt

1.48

EIRQ1, WPB

Low-level input

voltage

VIL

0.37

High-level input

voltage

VIH

CMOS

supported

1.40

MON1, MON2

Low-level input

voltage

VIL

0.51

High-level output

voltage

VOH

IOH =

2 mA

AVDD30

0.4

V

SCL2(TXD), SDA2(RXD),

EXCLK, EIRQ1, MON1,

MON2

High-level output

voltage

VOH

IOH =

0.1 mA

1.32

V

DGDIN, DGSSB,

DGSCLK, DGDATA

Low-level output

voltage

VOL

IOL = 2 mA

0.2

V

SCL2(TXD), SDA2(RXD),

DGDIN, DGSSB,

DGSCLK, DGDATA,

EXCLK, SDA, SCL

Low-level output

voltage

VOL

IOL = 2 mA

0.4

V

MON1,MON2,EIRQ1

Analog input

voltage

VAI

AVSS

AVDD30

V

OPINPX, OPINPY,

OPINPAF, OPINMX,

OPINMY, OPINMAF

PullUp resistor

Rup

50

200

kΩ

MON1, MON2, EIRQ1,

SCL2(TXD), SD2(RXD)

PullUp resistor

Rup

180

800

kΩ

DGDATA, DGDIN,

DGSSB, DGSCLK

PullDown resistor

Rdn

50

220

kΩ

MON1, MON2, EIRQ1,

SCL2(TXD), SDA2(RXD),

EXCLK, WPB

PullDown resistor

Rdn

120

500

kΩ

DGDATA, DGDIN,

DGSSB, DGSCLK

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Output Current

OUT1 to OUT4

Full code

200

mA

Output Current

OUT5, OUT6

Full Code

OP-AF (bidirection / unidirection)

CL-AF

150

mA

Non-volatile Memory Characteristics

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Endurance

EN

1000

Cycles

Data retention

RT

10

Years

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.